Manufacture of edge light-emitting diode

Abstract

Abstract PURPOSE:To manufacture an ELED with a good yield in manhours fewer than that by a conventional method, by employing an RIE method and sticking an insulation film appropriate in its refractive index and thickness on a light drawing surface. CONSTITUTION:Projecting structure is formed as shown in a figure by performing an inclined RIE method in the direction of an angle (theta) with a surface of a substrate. An SiN film is stuck to form an insulation film 8 by a plasma CVD method so that this film is easily stuck on an end plane. Afterwards a photoresist is used as a mask to open this film by the use of hydrofluoric acid. A refractive index of SiNx can be varied according to forming conditions. Assuming that the refractive index n0 of an InP film (and an InGaAsP film) is - 3.4 and its wavelength lambda is -1.3mum, the refractive index (n1) and thickness (d1) of the SiNx film is made appropriate in the following equation: n1<2>-n0, d1-1.84. Hence, n1-1.84 and d1-0.18mum are obtained.

Inventors

• 👤 Yoichi Isoda

Bibliographic Details