Semiconductor device and manufacture thereof

Abstract

Abstract PURPOSE:To form a punch through stopper localized inside a substrate without complicating a manufacturing process, by composing an insulation layer to form a punch through stopper between source and drain regions more deeply on a surface layer of a semiconductor substrate. CONSTITUTION:A field oxide film 2 and a channel stopper layer 11 are formed, and next a dry etching technique is used to dig a groove 3 on one part 23 of a region where an active region of an Si substrate 1 is formed. A thin oxide film (SiO2 film) 4 of several nm - tens of nm in thickness is formed on a surface of the Si substrate 1 and an inner surface of the groove 3. Subsequently a polycrystalline Si film 5 is piled on the whole surface of the substrate. The polycrystalline Si film 5 is etched back until that on the substrate is removed, so that the polycrystalline Si film 5's part buried into the groove 3 is made to remain. In succession the insulation film 4 on the surface of the substrate is removed by etching, and also its part on the surface of the groove 3 is removed by etching. A selective epitaxial growth technique is used on this state to form a single-crystalline Si film 6.

Inventors

• 👤 Ryuichi Izawa
• 👤 Mitsunori Ketsusako
• 👤 Norio Hasegawa
• 👤 Eiji Takeda

Bibliographic Details