Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To bury an insulating film in a flat structure having no cavity by correcting the film in a groove so as to have a smooth slope by a bias sputter depositing method. CONSTITUTION:After grooves are formed on a semiconductor substrate 1, a CVD SiO2 film is formed as a first insulating film 10 on a whole surface. Then, an SiO2 film of a second insulating film 11 is formed by a bias sputter depositing method. A CVD SiO2 film is formed as a third insulating film 13 on the upper surface. In this case, since the surface of the base 11 is made of the bias sputter deposited SiO2 film, it has a smooth slope, and the film 12 can be formed without cavity. Then, a first photoresist film 4 and a second photoresist film 5 are formed, and etched back to obtain a shape shown in Figure (d).

Inventors

• 👤 Takashi Osone
• 👤 Masanori Fukumoto

Bibliographic Details