Hall element

Abstract

Abstract PURPOSE: To obtain a Hall element, sensibility of which is hardly varied up to a very low temperature and which has excellent linearity up to an extremely strong magnetic field, by adding a large quantity of an impurity into a semiconductor layer and generating a regenerate state. CONSTITUTION: Si, which has electron mobility smaller than GaAs, etc., by approximately one over several dozen, is used as a substrate 1, As ions are implanted in 10 19 /cm 3 Or more, and a uniform high concentration electron layer 2 is formed in fixed depth. A donor level shaped by As constitutes a band and is connected continuously to the conductor of an Si base body at that time, thus displaying metallic conductive characteristics. Consequently, the number of conduction carriers is hardly decreased at a low temperature, thus extremely reducing the temperature dependency of a Hall coefficient. Since donor ions at the center of the strong scattering of electrons are increased, scattering frequency is augmented and the mean free path of electrons is shortened, electron mobility μ is lowered and low magnetic-field conditions μB≪1 hold even at a strong magnetic field, and the linearity of magnetic field intensity B and Hall voltage VH holds even at the strong magnetic field. The effect is displayed even when B is added and holes having smaller mobility are utilized. COPYRIGHT: (C)1989,JPO&Japio

Inventors

• 👤 Seiichi Tanuma
• 👤 Kazuo Ito
• 👤 Yoshitomo Sasaki

Bibliographic Details