Field-effect type semiconductor device and manufacture thereof

Abstract

Abstract PURPOSE: To lower series parasitic resistance by forming source-drain by using two layers consisting of a low-concentration impurity layer and a high- concentration impurity layer. CONSTITUTION: Si ions are implanted selectively onto a semi-insulating GaAs substrate 6 to shape an operating layer 3. A gate electrode 1 composed of WSi is formed. SiO 2 films 7 are shaped to the specified sections of the substrate 6, and low-concentration impurity layers 4a are formed into source-drain regions, employing the electrode 1 and the films 7 as masks. The films 7 are removed, SiO 2 films are applied onto the whole surface, and the SiO 2 films 5 are left only on the side face of the electrode 1. Resist films 8 are shaped to the specified sections, and high-concentration impurity layers 4b are formed, using the electrode 1, the films 5 and the resist films 8 as masks. Accordingly, source-drain are formed by employing layers of two kinds of the low-concentration impurity layers and high-concentration impurity layers, thus lowering series parasitic resistance without increasing a short channel effect. COPYRIGHT: (C)1989,JPO&Japio

Inventors

• 👤 Mikio Kanamori
• 👤 Masaoki Ishikawa

Bibliographic Details