Plasma etching device

Abstract

Abstract PURPOSE: To make it possible to conduct high-speed etching by a method wherein the etching is conducted by confining the plasma produced by microwave excitation in the vicinity of a placing stand using a magnetic field applying means. CONSTITUTION: Etching gas is introduced into the quartz tube 2 of a vacuum container 1. A magnetic field is generated by applying a current on coils 6A and 6B, and at the same time, microwaves are generated by a magnetron 10, and plasma is generated by allowing the magnetic field and a high frequency electric field to work on the etching gas. The generated plasma is confined in the etching chamber located in the vicinity of a placing stand 4 by the magnetic field M mirror and MCUSP for confinement applied by the coils 6A and 6B, high density plasma is formed in the vicinity of a placing stand 4, and the surface of a wafer 5 is etched. COPYRIGHT: (C)1989,JPO&Japio

Inventors

• 👤 Masanobu Nakano
• 👤 Kotaro Hamashima
• 👤 Naoyoshi Fujiwara
• 👤 Itsuko Hori

Bibliographic Details