Formation of electrode

Abstract

Abstract PURPOSE: To prevent the deterioration and degeneration of a device and to obtain excellent Schottky characteristics by a method wherein a sintering operation is conducted when a sintering material only is deposited on a substrate. CONSTITUTION: An insulating layer 11 is formed on a GaAs substrate 10, the insulating layer 11 located on the position where a gate electrode part was formed is removed, and a gate pattern 12 is formed. A sintering material 14 consisting of Ti and the like is deposited on and adhered to the substrate 10, and when the substrate is heated up from the side of the material 14 using an electron beam, the material 14 is sintered in the substrate 10. Then, an electrode surface material 15 is deposited on and adhered to the substrate 10 on which the material 14 is deposited. Subsequently, for the substrate 10, the part corresponding to the gate electrode part is covered by a photoresist 16, an Ar ion beam 17 is made to irradiate from the side of the resist 16, unnecessary materials 14 and 15 are removed, the resist 16 is also removed, and a gate electrode 18 is formed. COPYRIGHT: (C)1989,JPO&Japio

Inventors

• 👤 Naoya Miyano

Bibliographic Details