JPS6421080A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Plasma cvd device
Assignee: Nippon Steel Corp
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Filing: 1987-07-17
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Granted: —
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Expires: 2007-07-17
Abstract
Abstract PURPOSE:To increase the rate of film formation on the surface of a sample by arranging plural exhaust pumps for evacuating a sample chamber so as to allow gas to flow symmetrically on the sample as well as to increase the evacuating capacity. CONSTITUTION:Plasma is generated by excitation by electron cyclotron resonance with microwaves and a film is formed on a sample S in the sample chamber 3 of a plasma CVD device with the plasma. Plural exhaust pumps 3p for evacuating the chamber 3 are arranged in the device so as to allow gas to flow symmetrically on the sample S.
Inventors
- 👤 Yoichi Ueda
- 👤 Tei Oonita
- 👤 Toshikazu Takigawa
- 👤 Shinji Tano
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-09 02:25
CPC Classifications
—
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