Production of silicon dioxide coated film

Abstract

Abstract PURPOSE:To easily obtain the title dense silicon dioxide film at a low cost by bringing a processing soln. obtained by dissolving silicon dioxide in an aq. soln. of hydrofluosilicic acid kept at a specified temp. to supersaturation into contact with a substrate to deposit a silicon dioxide coated film on the substrate surface. CONSTITUTION:Silicon dioxide is dissolved in an aq. soln. of hydrofluosilicic acid having 3.5-5mol./l concn. to supersaturation to prepare the processing soln. The processing soln. is then brought into contact with a substrate (e.g., a glass substrate and a silicon substrate) to deposit the silicon dioxide coated film on the substrate surface, and the silicon dioxide coated film is produced. The substrate is dipped in a dip tank filled with the processing soln., and the substrate is appropriately brought into contact with the processing soln. Since the concn. of the hydrofluosilicic acid in the processing soln. is controlled to 3.5-5mol./l, the content of an OH group in the silicon dioxide coated film is reduced, and a dense coated film can be formed.

Inventors

• 👤 Takuji Aida
• 👤 Hisao Honda
• 👤 Hirotsugu Nagayama
• 👤 Akimitsu Hishinuma
• 👤 Hideo Kawahara

Bibliographic Details