Semiconductor laser device

Abstract

Abstract PURPOSE:To increase the absorption peak of exciton by forming a fine quantum line at part of a semiconductor layer having a quantum well layer on a first clad layer, using its one side as an absorption type optical modulator and the other side as a semiconductor laser. CONSTITUTION:An N-type AlGaAs clad layer 105 and an N-type AlGaAs guide layer 103 are sequentially grown on an N-type GaAs substrate 111. Then, a periodic groove is selectively formed on the layer 103. The width of the upper side of a trapezoidal section is set to approx. 100-200Angstrom , and its oblique face is formed in a plane A(111) at this time. Thereafter, when an active layer 101 is grown, a triangular crystal (107) is grown on the trapezoid, the width of the quantum well is set to approx. 50-100Angstrom to form a fine quantum line 107. Then, P-type AlGaAs layers 201, 202, and a P-type GaAs layer 203 are formed. Further, a lateral burying, a groove 115, and electrodes 112, 113, 114 are formed to complete it.

Inventors

• 👤 Yoshihiro Mori
• 👤 Masato Ishino
• 👤 Toshiya Yokogawa
• 👤 Hideki Yakida

Bibliographic Details