Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To prevent the occurrence of failures such as uneven etching and leaving of silicon by a method wherein, in a process of forming a metal wiring on one principal surface of a semiconductor substrate, the antireflection silicon film deposited on the metal wiring is not removed but changed into silicon oxide. CONSTITUTION:A silicon oxide film 2 is formed on a silicon substrate 1, and after an aluminum film 3 is sequentially deposited, an antireflection silicon film 4 is deposited and patterned with a photoresist 5. Then the antireflection silicon film 4 and the aluminum film 3 are selectively etched, and the photoresist 5 is removed. Thereafter, when it is treated for two hours in a O2 plasma using, for instance, a barrel type plasma ashing system, the antireflection silicon film 4 changes to a silicon oxide film 6. At this time, an alumina film of several 10Angstrom is formed also on the sides of the aluminum film 3, but it causes no problem and acts to protect the aluminum film 3. Also, the oxide film 2 on the underlying silicon substrate 1 is not etched but is stable.

Inventors

• 👤 Masato Tanaka

Bibliographic Details