Correcting method of defect of x-ray mask

Abstract

Abstract PURPOSE:To enable correction by the accurate positional alignment of a defect section by a method wherein an X-ray mask with a protective film is irradiated with focussed ion beams and the protective film is removed, a defect-section circuit pattern is exposed, the position of the defect is detected, focussed ion beams are applied and the defect section is corrected. CONSTITUTION:The upper section of an X-ray mask 200 is irradiated with ion beams, but a defect is not displayed onto a display 509 owing to a protective film on a pattern. A region in which there is a defect is detected by using a transmission type electron microscope, etc., a slightly wider region is scanned and worked by ion beams, a circuit pattern 205 is detected by the scanning ion image of a detector 508 when the circuit pattern 205 in a lower layer is exposed, and a defect section is aligned with high precision. Even currents to a plating electrode 203 can be detected besides the detection of secondary electrons and secondary ions from an X-ray mask at that time. Since working suddenly progresses in exposed Au having a high sputtering rate in this case, a metal 206 having a low sputtering rate such as Ta, W, etc. is formed thinly as the stopper of etching through plating, etc.

Inventors

• 👤 Hiroshi Yamaguchi
• 👤 Hiroya Saitou
• 👤 Mitsuyoshi Koizumi
• 👤 Akira Shimase
• 👤 Satoshi Haraichi
• 👤 Takeoki Miyauchi
• 👤 Shinji Kuniyoshi
• 👤 Susumu Aiuchi

Bibliographic Details