Semiconductor device

Abstract

Abstract PURPOSE:To improve the moisture resistance of a semiconductor device by coating the surface of the semiconductor device with protective films after connecting metallic wires to metallic electrodes of bonding pad parts. CONSTITUTION:After mounting bonding pad parts 105, thereby removing a part of the first protective film 106, a semiconductor device 101 is fixed on a lead frame 108 and metallic wires 104 are connected to the bonding pad parts. Then the second protective film 201 is formed at the surface of the semiconductor device 101 where the metallic wires 104 are connected and also at both sides of the lead frame 108. It is necessary for the second protective film to be formed at a low temperature to the utmost and either a film among SiO2, SiN, SiON and Al2O3 films which can be formed at temperatures of 220 deg.-280 deg.C with an optical CVD technique which performs film-deposition while irradiating ultraviolet rays having wavelengths of 300nm or less shall be used. Resin sealing is carried out after forming the second protective film.

Inventors

• 👤 Yoshiaki Hisamune

Bibliographic Details