Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To prevent cracking of interlayer insulating film, by etching a second wiring in a tapered part, which is formed by selective exposure and development of light sensitive polyimide formed on the interlayer insulating film. CONSTITUTION:In manufacturing procedures, at first a gate electrode 2 comprising WSi is formed on a semiconductor substrate 1 as a first wiring. Then, an interlayer insulating film 3 comprising SiO2 is formed on the entire surface of the semiconductor substrate 1. Thereafter, a light sensitive polyimide film 4 is formed on the entire surface of the semiconductor substrate 1 with spin coating so as to cover the interlayer insulating film. The light sensitive polyimide film 4 at a region, where a wiring is to be formed, is removed by exposure using a reduction projecting exposure method and a developing solution including N-methyl-2-pyrrolidone and methanol. A part of the interlayer insulating film 3 is exposed. Then the light sensitive polyimide film 4 after the development is cured. A multilayer metal film 5 are deposited on the entire surface of the semiconductor substrate 1. Then, the multilayer metal film 5 is selectively etched and a second wiring 6 is formed. Therefore cracking due to stress can be prevented.

Inventors

• 👤 Yasuo Mitsuma
• 👤 三間　康生

Bibliographic Details