Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To improve the crystallizability of an SOI formed by adding the ion implantation of a IV semiconductor to the surface layer of an silicon substrate. CONSTITUTION:The ion implantation of a IV semiconductor to the surface layer of a substrate 1 is added to an oxygen-ion implantation layer 2 to shape the implnatation layer (b) of the ions of the semiconductor, and implanted oxygen is combined and the implanted IV semiconductor is crystallized through heat treatment, thus forming an SOI 4a. Oxygen concentration is made relatively thinner than conventional devices in the surface layer of the substrate 1 through the ion implantation of the IV semiconductor. Since the crystal of the IV semiconductor takes the same diamond shape as the crystal of the substrate 1, the IV semiconductor (such as silicon, germanium, etc.,) is incorporated into the crystal of the substrate 1 through heat treatment after implantation. Accordingly, the crystallizability of the SOI shaped is improved, thus directly forming a transistor in the SOI.

Inventors

• 👤 Junji Sakurai
• 👤 桜井　潤治

Bibliographic Details