Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To form element isolation bands on which insulating materials are buried into the U grooves so as to obtain IC, a high quality by sticking a silicon oxide film on the whole surface including the inside of the U grooves by a vapor growth method in which organic silicon and oxygen are used as source gas and carrier gas, respectively. CONSTITUTION:While a silicon substrate 11 is heated at 600 deg.C to 700 deg.C, oxygen as carrier gas is made to flow into a reactive liquid container 12 and organic silicon liquid 20 held in the container 12 is bubbled and the organic silicon is carried into the reaction chamber 10. While vacuum exhaustion is performed by means of an exhaustion port 15 so that pressure inside the reaction chamber 10 is reduced, the organic silicon is thermally decomposed on a surface of the silicon substrate 11 and made to react to oxygen so that a SiO2 film is sticked thereon. Since the SiO2 film 16 growing in this way by the reduced-pressure CVD method, in which organic silicon is used as decomposition gas, is excellent in its coverage, the SiO2 film is almost fully buried into the U grooves. Therefore, bad effects of crystal defects induced by an IOP method can be removed and so IC, a high quality can be obtained.

Inventors

• 👤 Kazuyuki Kurita
• 👤 栗田　和行

Bibliographic Details