Ashing apparatus

Abstract

Abstract PURPOSE:To perform ashing treatment even in a single-wafer processing for large-sized semiconductor wafers at a high ashing speed in a short time, by providing a means for supplying ashing gas and a means for supplying plasma gas. CONSTITUTION:A thick photoresist film is deposited on the surface of a semiconductor wafer 12 and serves as a protecting film. If there is no risk of giving damage on the semiconductor wafer 12, plasma characterized by a quick ashing speed is used to ash the film in the begining. When the photoresist film deposited on the surface of the semiconductor wafer 12 becomes thin because of the ashing and the risk for giving the damage on the semiconductor 12 occurs, the plasma ashing is replaced by an ozone ashing. Therefore the high ashing speed can be obtained without giving the damage to the semiconductor wafer 12 by the ashing using the plasma. For example, the treating time of one semiconductor wafer 12 can be made to be an about one minute.

Inventors

• 👤 Kimiharu Matsumura
• 👤 松村　公治

Bibliographic Details