Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To form a metallic wiring layer without steps, by burying a metallic film in a groove formed in an insulation film. CONSTITUTION:A smooth coating film 2 is provided with a contact hole 3. A groove 6 is then formed in the contact hole 3 of the smooth coating film 2 so that a wiring layer is provided in the groove 6. A metallic film 4 is then formed by the spattering or vapor deposition and a photoresist layer 7 is provided on the metallic film 4. The photoresist 7 and the metallic film 4 are etched under such conditions as they are etched approximately at the same rate, whereby a metallic wiring layer 5 is formed in a condition that it is buried in the grove 6 formed in the smooth coating film 2. Finally, the residual photoresist 7 on the metallic wiring layer 5 is removed. In this manner, namely by forming the metallic wiring layer 5 such that it is buried in the smooth coating film, the metallic wiring layer 5 can be formed without steps and in a stable manner.

Inventors

• 👤 Yuzo Irie
• 👤 入江　祐三
• 👤 Takashi Urabe
• 👤 卜部　隆

Bibliographic Details