Selective epitaxial growth method

Abstract

Abstract PURPOSE:To effectively separate between elements by coating a region except a projection on a single crystal substrate with an amorphous layer, growing a crystal layer on the whole surface on the substrate to miniaturize the formation of the element. CONSTITUTION:A resist pattern 15 is formed on a single crystal substrate 11. A region except an active region of the substrate 11 is etched, and a projection 12 is formed on the active region of the substrate 11. Amorphous GaAs layers 13A, 13B of the same type as the grown molecules are grown on the whole substrate 11. A GaAs layer 13A is lifted off, and a GaAs layer is grown as a crystal layer on the whole substrate 11. Then, a single crystal layer 14A is selectively epitaxially grown on the substrate 11, and a polycrystalline layer 14B is grown on the layer 13B. Accordingly, the layer 14B is not impregnated into the region of the layer 14A to narrow the region of the layer 14A. Thus, the formation of the element is miniaturized to effectively separate between the elements.

Inventors

• 👤 Koichiro Kotani
• 👤 小谷　紘一郎

Bibliographic Details