Semiconductor integrated circuit device

Abstract

Abstract PURPOSE:To improve the degree of integration and high-frequency characteristics by sharing a leading-out electrode in conductivity type polycrystalline Si as one electrode for a capacitor and a base electrode for a side-wall base electrode structure transistor. CONSTITUTION:A thermal oxide film 2 is formed onto a semiconductor substrate 1, a transistor region 11 as a projecting section is shaped, and a polycrystalline Si layer 3 is formed. An unnecessary section in the Si layer 3 is changed into a thermal oxide film 4, and an impurity is introduced to the Si layer 3. A thermal oxide film 6 is shaped through thermal oxidation while P-type diffusion layers 12 are formed on the side walls of the region 11. The oxide film 6 only in a capacitor section is removed, an Si nitride film 7 is grown, and polycrystalline Si layers 8 are grown. An impurity is introduced to the Si layers 8, and the layers 8 are etched. As a final step, an Al electrode 9 sharing one electrode for the capacitor and a base electrode for a transistor and the other electrode 10 for the capacitor are formed to contact holes.

Inventors

• 👤 Michio Ishikawa
• 👤 石川　通夫
• 👤 Katsuyoshi Washio
• 👤 勝由 鷲尾
• 👤 Kazuo Nakazato
• 👤 和郎 中里
• 👤 Toru Nakamura
• 👤 徹 中村

Bibliographic Details