Semiconductor device and manufacture thereof

Abstract

Abstract PURPOSE:To provide a sufficient dielectric strength between an electrode wiring and a gate electrode wiring by providing silicon nitride films so as to contact the gate electrode, a source region and a drain region except an electrode contact part. CONSTITUTION:Field insulating films 4 are formed on a p-type silicon substrate 1 and a gate electrode 3 is formed on the substrate 1 with a gate insulating film 2 between. Ions are implanted with the gate electrode 3 and the field insulating films 4 as masks to form n<->type source and drain regions 6. Then an Si3N4 film 20 is grown and a polycrystalline silicon film 21 with a high purity is grown on the film 20. Then the polycrystalline silicon film 21 is vertically etched from the upper surface by RIE and the polycrystalline silicon films 21 are left only on the side surfaces around the gate electrode 3. Then hot oxidation is carried out at the high temperature and the polycrystalline silicon films 21 which are formed only on the side surfaces of the gate electrode 3 are converted into SiO2 films 21'. After that, arsenic ions are implanted with the gate electrode 3 including the SiO2 films 21' and the field insulating films 4 as masks to form n<+>type regions 5 in the source and drain regions.

Inventors

• 👤 Yasuhisa Sato
• 👤 泰久 佐藤

Bibliographic Details