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JPS6353261A Expired / Lapsed JP ⏱️ 0.0 years remaining

Plasma treatment device

Assignee: Hitachi Ltd
•
Filing: 1986-08-25
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Granted: —
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Expires: 2006-08-25
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Abstract

Abstract PURPOSE:To improve the uniformity of a treatment speed and film formation by providing plural pieces of magnets to one of a pair of electrodes and moving the magnet group in the direction where the magnets are arranged. CONSTITUTION:A plate 15 is disposed approximately concentrically with a target 12 into the 2nd electrode 7 of a pair of the electrodes disposed in a treatment chamber 1. Plural pieces of the magnets 16 are disposed circumferentially and annularly in said plate 15. The magnetic poles of the magnets 16 are respectively so disposed that magnetic fluxes 17 are formed in the circumferential direction. A high-frequency voltage is impressed between the electrodes 6 and 7 and the plate 15 is rotated by a motor 13. The formed plasma 18 is bound by the magnetic flux 17 and is confined near the target 12 but the magnet 16 rotates integrally with the plate 15; therefore, the respective local plasma regions revolve around the center line near the target 12. Plasma 18 is, therefore, generated uniformly over the entire surface of the target 12, by which the sputtering particles are deposited to a uniform film thickness on a wafer 5.

Inventors

  • 👤 Takeshi Oyamada
  • 👤 武 小山田

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-11-03 00:08
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/22; C23C14/34; C23C14/3407

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