Device for forming functional deposited film by plasma cvd method

Abstract

Abstract PURPOSE:To form a deposited film having a uniform film thickness and quality by constituting a titled device in such a manner that the angle of gaseous raw material release holes with the surface of a cylindrical substrate, the inside diameter of the release holes, the spacings between the releases holes, the outside diameter of the substrate and the distance between the center of gas introducing pipes and the center of the substrate respectively satisfy the specific equations. CONSTITUTION:The many gas release holes 9 are respectively provided to the plural gaseous raw material introducing pipes 8 installed in the device at the time of forming the functional deposited film on the surface of the cylindrical substrate 6 by a plasma CVD method. The gas release holes 9 are provided in this stage. The device is so constituted that the angle of the gas release holes 9 with the substrate 6 surface, designated as theta[rad], the inside diameter of the release holes 9, designated as d1[mm], the spacings between the release holes 9, designated as d2[mm], the outside diameter of the substrate 6, designated as R1[mm], and the distance between the center of the substrate 6 and the center of the introducing pipes 8, designated as R2[mm] satisfy the equation, 0.5<=d1<=1.5, 10<=d2<=100. The deposited film having the film thickness and quality uniform in the circumferential and generator directions is thereby formed on the substrate 6 surface without rotating the cylindrical substrate 6.

Inventors

• 👤 Takashi Arai
• 👤 新井　孝至

Bibliographic Details