Manufacture of semiconductor integrated circuit device

Abstract

Abstract PURPOSE:To form an oxide film having excellent characteristics on the surface of a polycrystalline film by providing a process, in which an amorphous film is shaped, and a process in which the oxide film is formed through thermal oxidation. CONSTITUTION:An amorphous silicon film 7 to which a substance such as phosphorus is doped is shaped on the whole surface at a temperature such as not more than 580 deg.C one through a decompression CVD method using a substance such as SiH4 and a substance such as PH3 as a reaction gas, and the amorphous silicon film 7 is patterned through etching to form a predetermined shape. The amorphous silicon film 7 shaped in this manner has the surface far flatter than a polycrystalline silicon film. The whole is thermally oxidized in an atmosphere such as a dried O2 atmosphere at a temperature in an extent that the amorphous silicon film 7 is not crystallized such as a temperature of 580 deg.C or less, thus forming a thin SiO2 film 8 in film thickness such as not more than approximately 10 nm one on the surface of the amorphous silicon film 7.

Inventors

• 👤 Takaaki Aoshima
• 👤 青島　孝明

Bibliographic Details