Floating gate type mos semiconductor device

Abstract

Abstract PURPOSE:To ensure excellent workability in the manufacturing of a control gate electrode and floating gate electrode by a method wherein the floating gate electrode is formed on the sides of the control gate electrode with the intermediary of an insulating film. CONSTITUTION:A gate oxide film 2 is grown on a P-type silicon substrate 1. A step follows wherein a polycrystalline silicon film is formed to be a control gate electrode 3. Next, a silicon oxide film 4 is grown on the surface of the control gate electrode 3. A second polycrystalline silicon layer 5A is then deposited by vapor growth, after which the entire surface is subjected to anisotropic ion etching. After a silicon oxide film is grown to cover the entire surface, arsenic is diffused for the formation of N<+> diffusion layers 7 to serve as source.drain. Finally, an aluminum wiring is built after contact holes are provided in the control gate electrode 3 and N<+> diffusion layers 7.

Inventors

• 👤 Kiyouzou Sekiya
• 👤 関家　恭三

Bibliographic Details