Semiconductor device

Abstract

Abstract PURPOSE:To realize the high integration by a method wherein a conductive layer corresponding to one of two mutually adjacent electrical connection regions and a conductive layer corresponding to the other are formed on mutually different layers through the intermediary of an interlayer insulating film. CONSTITUTION:After an interlayer insulating film 32 made of SiO2 has been grown on a conductive layer 24 and an interlayer insulating film 31, a contact window 23 is opened at the interlayer insulating films 32, 41. Then, a polycrystalline Si layer as the third layer is grown on the interlayer insulating film 32, and a conductive layer 26 is formed after this polycrystalline Si layer has been processed by patterning. Therefore, the conductive layers 24, 26 corresponding to mutually adjacent source-drain regions 16a, 17a can be formed on mutually different layers through the intermediary of the interlayer insulating film 32. Through this constitution, even when the plane space between the conductive layers 24, 26 cannot be secured, the conductive layers 24, 26 do not influence each other electrically and the high integration can be realized. 36, 37: bit line.

Inventors

• 👤 Masataka Shinguu
• 👤 新宮　正孝
• 👤 Shinichi Ito
• 👤 信一 伊藤

Bibliographic Details