Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To remove W grains without reduction of a SiO2 layer, by depositing a SOG film as an insulating layer on a SiO2 layer and making W grow. CONSTITUTION:A SiO2 layer 11 is deposited as an insulating layer on a surface of a Si substrate 10 and a SOG film 12 is deposited thereon. Successively, a contact hole 13 is formed and besides a tungsten layer 14 is piled inside the contact hole. At that time, W grains 15 are stuck on the upper surface of the SOG film. These are processed with a fluoric acid-group etching liquid. Because a dissolution speed of SiO2 is smaller than that of SOG, the SiO2 layer is hardly etched in the process of removing the W grains 15 so that an undesirable state wherein the insulating film is reduced can be avoided.

Inventors

• 👤 Osamu Shimizu
• 👤 修 清水
• 👤 Michiari Kono
• 👤 通有 河野

Bibliographic Details