Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To make a Si layer selectively grow inside an opening part so that a semiconductor device having high reliability is manufactured, by specifying a flow rate ratio of a SiH2Cl2 gas to a HCl gas and a flow rate ratio of a SiH2Cl2 gas to a H2 gas. CONSTITUTION:Contact holes 18 and 19 attaining to surfaces of a source diffu sion region 14 and a drain diffusion region 15, respectively, are formed in a laminated film consisting of a silicon oxide film 16 and a BPSG film 17. Succes sively, a flow ratio of a SiH2Cl2 gas to a HCl gas is set 0.2 to 0.5 and a flow ratio of a SiH2Cl2 gas to a H2 gas is set 2X10<-4> to 1X10<-2> so that silicon layers 20 are buried inside contact holes 18 and 19 by a silicon selective vapor growth method. When a temperature of a reaction chamber is set 800 deg.C to 950 deg.C, impurities contained in doping gases are diffused in the substrate 11. when the whole pressure at the time of selective vapor growth is set 300 Torr or less, the amount of buried silicon layers 20 can be improved in their uniform ity.

Inventors

• 👤 Shuichi Samata
• 👤 秀一 佐俣
• 👤 Yoshiaki Matsushita
• 👤 松下　嘉明
• 👤 Mitsuchika Saitou
• 👤 光親 斉藤
• 👤 Hisayo Sasaki
• 👤 佐々木　寿代

Bibliographic Details