Manufacture of semiconductor

Abstract

Abstract PURPOSE:To obtain the structure of excellent multilyer interconnections without step cutting and the like, by smoothing the edge part of a conductor layer comprising polycrystalline silicon. CONSTITUTION:A polycrystalline silicon film 3 is entirely etched until the thin part beneath an oxide film 6 is eliminated. With the remaining polycrystalline silicon film 3 as a mask, a gate oxide film 2 is removed. Then, a second gate oxide film 8 and an insulating oxide film 9 are formed on the exposed surface of a silicon substrate 1 and the polycrystalline silicon film 3 by hydrogen burning oxidation. The gate oxide film 8 is removed by wet etching. A second gate oxide film 8a is formed again by dry oxidation this time. At this time, the insulating oxide film 9 is also etched once. An oxide film 9a is obtained by dry oxidation. A polycrystalline silicon film 10 is deposited on the gate oxide film 8a and the oxide film 9a to form the upper conductor layer. Thus the conductor layer, which comprises a polycrystalline silicon layer and has a smooth edge, is formed.

Inventors

• 👤 Shuichi Enomoto
• 👤 秀一 榎本

Bibliographic Details