Manufacture of polycrystalline silicon resistor

Abstract

Abstract PURPOSE:To form a resistor in relatively higher resistance value easily by a method wherein a resistor forming position on a poly Si layer is coated with a mask and then a metallic silicide layer is deposited thereon further a laminated structure is masked before subjecting to etching process. CONSTITUTION:An SiO2 layer 14 is provided on a poly Si layer 13 to be left as a part required for a mask forming a protective resistor A with the residual parts to be removed by etching process. Then an MoSi layer 15 is deposited on the overall surface. Next, the MoSi layer 15 is coated with a photoresist 16 to be a gate electrode 18 and a mask over an interconnection pattern connected to the electrode 18. Finally, the MoSi layer 15 not covered with the photoresist 16 is removed and then the poly Si layer 18 not masked by the SiO2 layer 14 is also removed. Through these procedures, a resistor 17 in relatively higher resistance value can be formed easily.

Inventors

• 👤 Shinji Sugaya
• 👤 慎二 菅谷

Bibliographic Details