Formation of fine pattern

Abstract

Abstract PURPOSE:To form a fine pattern without damaging a substrate by a method wherein two kinds of metal films being different in etching speed are laminated on a substrate with an interlayer insulating film interposed in between, and the metal film of the upper layer is etched selectively so as to control the thickness. CONSTITUTION:An interlayer insulating film 32 of SiO2 is formed on a GaAs substrate 31 forming an AlGaAs epitaxial layer. Next, after a titanium film 33 is formed by evaporation, a metal film 34 whose etching speed is higher than that of the film 33 is formed by evaporation. Then, a photoresist film 35 having an opening 36 is formed on the film 34. When ion milling is applied with the film 35 used as a mask and by using an Ar gas, metal ions produced by etching stick to the opening 36, and thereby the dimensions of the etched part of the film 34 are lessened. The dimensions of the opening of the film 34 are controlled by controlling the evaporation thickness of the film 34, and the films 32 and 33 are etched with the film 34 used as a mask.

Inventors

• 👤 Mitsuji Nunokawa
• 👤 満次 布川

Bibliographic Details