Manufacture of thin-film thermistor

Abstract

Abstract PURPOSE:To obtain a stable operation even in a high-temperature region by a method wherein a silicon carbide thin film and gold/chromium laminated counter electrodes are formed in succession on a substrate, gold wires are connected to the laminated electrodes and the silicon carbide thin film is annealed at a prescribed temperature. CONSTITUTION:When a silicon carbide film 2 is to be formed on an insulating substrate 1 and, in succession, gold 3/chromium 4 laminated counter electrodes 5, 5' are to be formed, an evaporation method or a sputtering method is used. After gold wires 6, 6' have been connected to the respective laminated counter electrodes 5, 5' at points 7, 7', this assembly is heated at about 400-750 deg.C and the silicon carbide thin film 2 is annealed. By this setup, it is possible to obtain a thin-film thermistor whose corrosion resistance and resistivity are excellent, which displays an identical resistance value even against a reversible change of a temperature and which can be used effectively even in a high- temperature region.

Inventors

• 👤 Kazuyuki Ozaki
• 👤 和行 尾崎

Bibliographic Details