Measuring method for quantity of pattern shifted

Abstract

Abstract PURPOSE:To shorten the time until the result of measurement is obtained, and to feed back the result of measurement quickly by acquiring the quantity of a pattern shifted from the difference of a distance between elements holding a stepped section among an epitaxial growth surface and non-epitaxial growth surfaces and a distance between the non-epitaxial growth surfaces. CONSTITUTION:A buried layer is formed to an silicon wafer, and one part of the silicon wafer to which the buried layer is shaped is grown in an epitaxial manner. A distance 6 between elements holding stepped sections between an epitaxial-grown position 3 and a position 4 not grown in the epitaxial manner is measured, and a distance 7 between elements at the position not grown in the epitaxial manner is measured. The quantity of a pattern shifted 5 is acquired from the difference of distance 6, 7 measured at two positions. Fifteen min is required for the measurement, and the measuring time is made largely shorter than that of three or five hrs in conventional devices. The quantity of the pattern shifted 5 measured at that time coincides with the quantity of the pattern shifted through a conventional stain etching method. Accordingly, the time can be shortened largely, thus quickly feeding back the result of measurement.

Inventors

• 👤 Yasuhide Komatsu
• 👤 小松　靖秀

Bibliographic Details