Gaalas infrared light emitting diode

Abstract

Abstract PURPOSE:To obtain a GaAlAs light-emitting diode capable of providing high output at a wavelength over 700 nm, by defining the mixed-crystal ratios of Al in light-emitting, clad and window layers to specific relations, respectively. CONSTITUTION:On a P-type GaAs substrate 1, a P-type Ga1-yAlyAs clad layer 2, a P-type Ga1-x AlxAs light emitting layer 3, an N-type Ga1-yAlAs clad layer 4 and an N-type Ga1-zAlzAs window layer 5 are provided sequentially in that order. Mixing ratio (x) of Al in the crystals of the light emitting layer 3, (y) of Al of the clad layer 4 and (z) of Al of the window layer 5 are defined so as to meet the conditions as follows: X<=0.3, x+0.3<=y<=x+0.4, z>y and z>=0.7. In this manner, light can be radiated without any loss caused by absorption of light on the way. Thus, it is made possible to obtain a GaAlAs light-emitting diode having high output at a wavelength over 700 nm.

Inventors

• 👤 Yuji Shiomi
• 👤 塩見　有司

Bibliographic Details