Mos-type semiconductor device

Abstract

Abstract PURPOSE:To provide a high-speed device by a method wherein source and drain regions of low impurity concentration in an LDD (Lightly-Doped Drain) structure are covered with a side wall gate and their electrical conditions are controlled by the side wall gate. CONSTITUTION:A side wall gate 9 is provided at an end face of a gate electrode 4 through the intermediary of a tunnel oxide film 8 and a low-concentration source and drain regions 71 and 72 are covered with the side wall gate 9. The side wall gate 9 is connected by the tunnel effect to the gate electrode 4. In such a design, a change in the potential of the gate electrode 4 causes a change in the potential of the side wall gate 9, which means that the low-concentration source and drain regions 71 and 72 are under control of the gate electrode 4. For example, in case of an N-channel device, application of a positive potential through a gate electrode 4 not only induces many electrons in the N-channel itself but also in a low-concentration source and drain regions 71 and 72. This accelerated the circuit operating speed.

Inventors

• 👤 Takeya Ezaki
• 👤 豪弥 江崎

Bibliographic Details