Semiconductor device

Abstract

Abstract PURPOSE:To obtain a high breakdown strength between the N<+>type source region and the N<+>type drain region of a dual-gate MOSFET with a short distance by a method wherein a P-type region is formed around the N<+>type source region and the drain region adjacent to a P<->type layer is formed as an N-type layer and an N<+>type substrate. CONSTITUTION:A source region 18, a channel region 13 and a drain region 11 are formed on the sidewall of a trench 8 formed in a semiconductor substrate 1. 1st and 2nd gate electrodes 10 and 12 are built up in the trench 8 with a gate insulating film 9 between. A drain resistance is controlled by the 1st gate electrode 10 provided corresponding to the drain region 11 and a switching operation is performed by the 2nd gate electrode 12 provided corresponding to the channel region 13. With this constitution, a high breakdown strength between the source region 18 and the N<+>type drain region 11 can be obtained with a short distance and, moreover, as the junction plane between a P<->type layer 3 and an N-type layer 2 is a flat plane, a high breakdown strength can be obtained.

Inventors

• 👤 Koji Otsu
• 👤 大津　孝二

Bibliographic Details