Superconducting device

Abstract

Abstract PURPOSE:To prevent an irregularity of a device characteristic and a change in the characteristic with the passage of time and to stabilize an operation by a method wherein a diffusion preventive layer or an evaporation preventive layer used to prevent the diffusion or evaporation of copper is formed on one face or both faces of a thin film of an oxide superconductor. CONSTITUTION:A thin-film diffusion preventive layer 2 of CuO with a thickness of about 100 nm is formed on a sapphire substrate 1 with a thickness of about 500 mum by a high-frequency sputtering method using Ar gas. Then, an oxide superconductor 3 with a thickness of about 1 mum is formed by a sputtering method using a target whose constituent is YBa2Cu2O6.5; it is heat-treated at about 950 deg.C for one hour. Lastly, the oxide superconductor 3 is processed by a sputtering etching method using Ar gas or the like; an electrode whose two parts are coupled by a thin-film part is formed.

Inventors

• 👤 Juichi Nishino
• 👤 西野　壽一
• 👤 Ushio Kawabe
• 👤 川辺　潮
• 👤 Mikio Hirano
• 👤 幹夫 平野

Bibliographic Details