Hybrid coupler type semiconductor phase shifter

Abstract

Abstract PURPOSE:To obtain the miniaturized and lightweight titled semiconductor phase shifter by using a gate connection line so as to connect gates of two FETs of the phase shifter thereby using one bias circuit only. CONSTITUTION:A ground conductor 2 of a semiconductor substrate 1 is soldered to a chassis or the like to connect a common source electrode 8 and a grounding pad 16 to ground. A drive bias voltage is supplied from a bias pad 12 to a gate electrode 7 of one FET 9 and impressed also to a gate electrode 7 of the other FET 9 via a gate connection line 18. In this case, a common source electrode 8 is connected to ground and a drain electrode 6 is connected to ground in terms of DC by connecting the grounding pad 16 to ground and the two FETs 9 are operated normally. In connecting the gate electrodes of the two FETs in this way, one bias circuit is enough for the application to attain the miniaturized and lightweight phase shifter.

Inventors

• 👤 Hiroshi Aoki
• 👤 浩 青木
• 👤 Kazuhiko Nakahara
• 👤 和彦 中原
• 👤 Makoto Matsunaga
• 👤 誠 松永

Bibliographic Details