Semiconductor treatment

Abstract

Abstract PURPOSE:To make it possible to carry out rapidly the degreasing on the surface of a semiconductor and the removal and cleaning of the contamination due to inorganic substances in a comparatively short time by a method wherein a quarternary ammonium hydroxide, a nonionic surface active agent and hydrogen peroxide are each contained in a specified ratio. CONSTITUTION:A quarternary ammonium hydroxide of a general formula RnN(R')4-n.OH, where the R shows an alkyl group having 1-4 carbon atoms, the R' shows an alkyl group having 1-4 carbon atoms or a hydroxy-substituted alkylene group having 2-4 carbon atoms, the R and the R' can be both the same or can be different from each other and the (n) is an integer of 1-3, is used within the range of a concentration of 0.01-30 wt.% in the whole solution, desirably within the range of a concentration of 0.05-20 wt.%. A nonionic surface active agent is used within the range of a concentration of 0.001-5 wt.% in the whole solution, desirably within the range of a concentration of 0.01-3 wt.% and is normally used within the range of a concentration of 0.01-0.5 wt.%. Hydrogen perioxide is used within the range of a concentration of 0.001-20 wt.% in the whole solution, desirably within the range of a concentration of 0.01-10 wt.%. In case the concentration of the hydrogen peroxide is low, the control of an etching action is insufficient, while in case the concentration is high, there is no problem specially in the detergency itself, but the amount to be decomposed is increased and it is uneconomical to use the hydrogen peroxide in that way.

Inventors

• 👤 Tetsuo Aoyama
• 👤 哲男 青山
• 👤 Mayumi Takahashi
• 👤 真由美 高橋
• 👤 Jiro Ishikawa
• 👤 次郎 石川
• 👤 Eiji Shima
• 👤 志摩　英二

Bibliographic Details