Manufacuture of semiconductor thin film

Abstract

Abstract PURPOSE:To realize local heating and fusing of only the surface of a semiconductor layer while keeping a substrate at a low temperature and obtain polycrystal thin film having high mobility by forming an amorphous semiconductor thin film on a substrate and irrading such a film with pulsed ultraviolet rays having a pulse width of 25 ns or less. CONSTITUTION:An n-type amorphous silicon film doping phosphorus of 1 % is formed on a quartz substrate by the plasma CVD method. The amorphous silicon film is polycrystallized by irradiating the film with the ultraviolet ray laserbeam with pulse width of 1-25 ns. As for the pulsed ultraviolet rays with wavelength of 400 nm or less, the excimer laser which assures uniform beam in a large area is preferable. Thereby, the annealing which assures comparatively high output pulse beam in the ultraviolet ray region and provides high throughput for a large area can be realized. Good annealing effect can also be obtained with irradiation intensity of 140 mJ/cm<2> or less by setting the pulse width to be 25 ns or less and thereby a polycrystal thin film can be obtained without damage on the substrate.

Inventors

• 👤 Kenji Sera
• 👤 賢二 世良
• 👤 Shinji Ito
• 👤 紳二 伊藤

Bibliographic Details