Gaas field-effect semiconductor device

Abstract

Abstract PURPOSE:To enable a buffer layer to adequately serve as such and to prevent the peeling-off Pt layers attributable to difference in linear expansion coefficients by a method wherein a buffer layer to be positioned between a gate electrode Ti layer and Au layer is a laminate of three layers respectively of Pt, Ti, and again Pt, for the solution of difficulties attributable to pinholes or distortion in the Pt layers. CONSTITUTION:A GaAs field-effect semiconductor device of this design is provided with a multilayered-film gate electrode, composed of a Ti Schottky electrode layer 27, a buffer layer, and an Au protecting and electric resistance reducing layer 31. The buffer layer is a three-lamination structure of a Pt layer 28, a Ti layer 29, and another Pt layer 30. For example, an N<+>-layer 22 as a source.drain diffusion layer and an N-layer 23 as a channel layer are formed, an ohmic electrode 24 is built, the entire surface is covered by a negative resist 25, and then an opening 26 is provided in the N-layer 23. Next, Ti/Pt/Ti/Pt/Au are consecutively deposited out of vapor on the entire surface for the construction of a multilayered structure consisting of films 27-31, after which the negative resist 25 is removed by using an organic solvent. After this, an insulating film 32 as a protecting film is formed by CVD.

Inventors

• 👤 Masahisa Iketani
• 👤 昌久 池谷
• 👤 Toshio Nonaka
• 👤 野中　敏夫

Bibliographic Details