Semiconductor device

Abstract

Abstract PURPOSE:To control the threshold value on the side of a gate electrode in a highly precise manner by a method wherein the second undoped gate electrode layer is provided between the first gate electrode layer, having the impurity concentration for control of threshold value, and the third electrode layer to be used to bring a gate electrode into the state of low resistance. CONSTITUTION:The second undoped polycrystalline silicon layer 107b is provided between the first polycrystalline silicon layer 107a and a molybdenum silicide 107c. Accordingly, the impurities ion-implanted on the interface of the molybdenum silicide 107c and the second polycrystalline silicon layer 107b are prevented from being diffused to the first polycrystalline silicon layer 107a by thermal diffusion. As the impurity concentration of the first gate electrode layer 107a does not change, the threshold value can be controlled on the gate side in a highly excellent manner.

Inventors

• 👤 Tomohisa Mizuno
• 👤 智久 水野

Bibliographic Details