Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To prevent generation of a reaction product of a wiring material layer and reaction gas, also to prevent the forming of a thin film hard to remove on the side wall of an organic resin pattern in the formation of the organic resin pattern by providing a protective layer on the wiring material layer. CONSTITUTION:A photoresist 14 is etched by O2 RIE having an amorphous Si pattern 15a as a mask to form a photoresist pattern 14a (organic resin pattern). At this time, since the surface of Al-1.0% Si 12 as a wiring material layer is covered with amorphous Si 13, a thin film consisting of a reaction product of Al-1.0% Si 12 and O2 is not formed on the side wall of the photoresist pattern 14a, but an SiO2 thin film 17 is formed on the side wall of the photoresist pattern 14a by SiO2 generated by the reaction of amorphous Si 13 and O2. Next, an Al-1.0% Si pattern (wiring pattern) 12a having an amorphous Si pattern 13a on the upper surface is formed.

Inventors

• 👤 Yasuki Kimura
• 👤 泰樹 木村

Bibliographic Details