Forming method for semiconductor thin film

Abstract

Abstract PURPOSE:To form a semiconductor thin film having high quality by forming a semiconductor oxide film on a semiconductor film at a lower temperature than that of the solid growth of a single crystalline semiconductor thin film and then solid growing in the thin film. CONSTITUTION:The steps of forming a semiconductor oxide film 14 at a lower temperature than that of the solid growth of a non-single crystalline semiconductor thin film 12 on the film 12 on an insulating substrate 11, and solid growing in the film 12 are provided. That is, after the film 14 is formed on the film 12, a solid growth is conducted. Since the surface level of a boundary between the films 12 and 14 is minimum on a plane (100), the surface of the film 12 is crystallized to become the plane (100). Since the film 14 is further formed at lower temperature than that of the solid growth of the film 12, crystal nuclei are not generated before the crystallization in which the surface becomes the plane (100), and crystal defects due to the mixture of oxygen is extremely reduced.

Inventors

• 👤 Takashi Noguchi
• 👤 隆 野口

Bibliographic Details