Semiconductor device

Abstract

Abstract PURPOSE:To simplify the structure of the title device, and to enable hermetic seal by using a perforated insulating substrate, inserting a pin made of a metal into a through-hole in the perforated insulating substrate as a conductive medium communicating a wiring layer and the outside and fixing the pin with silver solder in the through-hole. CONSTITUTION:Pins 3 made of covar are inserted respectively into each through- hole in a perforated insulating substrate 1, which is formed by molding and sintering through a normal powder metallurgical method and is made of alumina, and the pins 3 are fastened to the perforated insulating substrate 1 by silver solder 14 flowed into the clearances of the through-holes from a substrate rear. Nickel plating layers 6 and gold plating layers 7 are shaped to protruding sections from the substrate rear of each pin 3 in succession. A wiring layer 8 consisting of aluminum is shaped onto a substrate surface and connected to respective pin 3, a semiconductor element 9 is loaded at a specified position, and each electrode for the semiconductor element 9 and the wiring layer 8 are connected by aluminum wires 11. Lastly, a cap 12 housing the semiconductor element 9 and the aluminum wires 11 and being made of ceramics is sealed normally with sealing glass 13, thus forming a hermetically sealed PGA.

Inventors

• 👤 Seisaku Yamanaka
• 👤 山中　正策
• 👤 Takao Maeda
• 👤 貴雄 前田
• 👤 Tadashi Igarashi
• 👤 五十嵐　廉

Bibliographic Details