Semiconductor device

Abstract

Abstract PURPOSE:To simplify the structure of the title device, and to enable hermetic seal by inserting a pin, the surface of which has a gold plating layer and which is made of a metal, into a through-hole in a perforated insulating substrate as a conductive medium communicating a wiring layer and the outside and fixing the pin with gold solder in the through-hole. CONSTITUTION:Pins 3, in which nickel plating layers 6 are formed onto the whole and gold plating layers 7 onto the layers 6 previously and which are made of covar, are inserted respectively into each through-hole in a perforated insulating substrate 1, which is shaped by molding and sintering through a normal powder metallurgical method and made of alumina. The pins 3 are fixed to the perforated insulating substrate 1 by gold solder 14 flowed into the clearances of the through-holes from a substrate rear. A wiring layer 8 consist ing of aluminum are formed onto a substrate surface and connected to each pin 3, a semiconductor element 9 is loaded at a specified position, and respective electrode for the semiconductor element 9 and the wiring layer 8 are connected by aluminum wires 11. Lastly, a cap 12 housing the semiconductor element 9 and the aluminum wires 11 and composed of ceramics is sealed normally with sealing glass 13, thus shaping a hermetically sealed PGA.

Inventors

• 👤 Seisaku Yamanaka
• 👤 山中　正策
• 👤 Takao Maeda
• 👤 貴雄 前田
• 👤 Tadashi Igarashi
• 👤 五十嵐　廉

Bibliographic Details