Production of diamond single crystal

Abstract

Abstract PURPOSE:To enable mass-production of stable diamond single crystal as a high- quality film having large area, by using a silicon carbide single crystal as a substrate for the epitaxial growth of a diamond single crystal film. CONSTITUTION:A silicon carbide single crystal substrate 13 is placed in a reaction chamber 7, the chamber is evacuated through an exhaustion port 10, H2 gas is introduced into the chamber through a branch pipe 8 to control the pressure in the chamber at a prescribed level and a plasma is generated at the center of the chamber by microwave radiation generated by a magnetron 1. The substrate 13 is heated to a prescribed temperature by irradiating light from a light source 14 and a gaseous mixture consisting of H2 gas and a specific amount of CH4 gas is introduced through the branch pipe 8 to effect the growth of a diamond single crystal. An epitaxially grown diamond single crystal film can be formed on the silicon carbide single crystal substrate [having crystal face orientation of (111)].

Inventors

• 👤 Akira Suzuki
• 👤 彰 鈴木
• 👤 Masaki Furukawa
• 👤 勝紀 古川
• 👤 Mitsuhiro Shigeta
• 👤 光浩 繁田
• 👤 Shigeo Nakajima
• 👤 中島　重夫

Bibliographic Details