Semiconductor light-emitting element

Abstract

Abstract PURPOSE:To isolate electrons and holes spatially, and to shorten the life of recombination by bringing into contact and forming a barrier layer, through which holes cannot be transmitted but electrons can be tunnel-conducted, to an active layer, in which radiant recombination is generated, and applying forward voltage. CONSTITUTION:Forward voltage corresponding to the band clearance of a first barrier layer 2 consisting of InP is applied through electrodes 10, 11. Holes 15 collect in an active layer 1 by a diffusion from a P-type InP layer 9. Electrons 14 collect in an inclination low energy band clearance layer 5a, particularly, in the vicinity of a boundary with the first barrier layer 2 having low potential. When electron density is increased, electrons having a high energy level are also generated owing to band filling. Electrons having energy coinciding with a quantum level 12 generated in the conduction band of the active layer 1 in the electrons are tunnel-conducted through the first barrier layer 2 and enter into the active layer 1.

Inventors

• 👤 Yoshitoku Nomura
• 👤 野村　良徳
• 👤 Hitoshi Ogata
• 👤 尾形　仁士

Bibliographic Details