Manufacture of field-effect transistor

Abstract

Abstract PURPOSE:To obtain an FET having a short gate length and low gate resistance and source resistance by a method wherein the second insulating film, having L-shaped cross-section, is formed on the opposing side walls of the first insulating film and a semiconductor layer and the exposed surface of a semiconductor. CONSTITUTION:The semiconductor layer 15, consisting of an N-type semiconductor layer 16 and a high density N-type semiconductor layer 17, is formed on the high resistance semiconductor substrate 15 consisting of GaAs and the like. Then, the insulating film 21, consisting of two layers of a silicon nitride film 19 and a silicon oxide film 20, is formed on the whole surface of the semiconductor, and then an insulating film 21 having an aperture part is formed using a photoresist layer. Then, the high density N-type semiconductor layer 17 is removed using the insulating film 21 as a mask, and the N-type semiconductor layer 16 is etched until the threshold voltage of an FET reaches the prescribed value. Subsequently, an SiO2 film 22 is formed on the whole surface as the second insulating film, an Si3N4 film 23 is formed on the whole surface as the third insulating layer, the Si3N4 film 23 is etched by performing an RIE, and the SiO2 film 22 is etched using an Si3N4 film 24 as a mask. The SiO2 film 25 left on the part directly below the Si3N4 film 24 is formed into an L-shaped cross-section.

Inventors

• 👤 Yuuki Imai
• 👤 祐記 今井
• 👤 Kuniki Owada
• 👤 大和田　▲くに▼樹

Bibliographic Details