Semiconductor device

Abstract

Abstract PURPOSE:To form an electrode wiring with excellent conductivity without discon nection at all by a method wherein two intermediate layers comprising specific material is provided between Al and polysilicon to form a wiring layer. CONSTITUTION:An insulating film 3 such as SiO2 etc., is deposited on an Si substrate 1 whereon an N type diffused region 2 etc., is formed to make a contact hole for coating with the first layer 4 comprising polySi doped impurity by CVD process. This layer 4 is further coated with the second lower Ti layer 5-1 and the upper Tin layer 5-2 by sputtering process to form the third Al layer on these two intermediate layers for completing a wiring layer. Due to the two intermediate layers, i.e., the Ti layer with excellent conductivity and the Tin layer with excellent barrier property, an electrode wiring with excellent conductivity without disconnection at all can be formed. Further, as the two intermediate layers, TiSi of TiN silicide and TiN, the same can be applied.

Inventors

• 👤 Yasunari Abe
• 👤 泰成 安部

Bibliographic Details